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The energy distribution of interface states for MOS devices with atomically smooth and rough Si(111)/ultrathin oxide interfaces was obtained from measurements of X-ray photoelectron spectra under biases between the metal overlayer and the Si substrate. The interface state density for the smooth interface is always lower than that for the rougher interface. Synchrotron radiation ultraviolet photoelectron...
The energy distribution of interface states for MOS devices with atomically smooth and rough Si(111)/ultrathin oxide interfaces was obtained from measurements of X-ray photoelectron spectra under biases between the metal overlayer and the Si substrate. The interface state density for the smooth interface is always lower than that for the rougher interface. Synchrotron radiation ultraviolet photoelectron...
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