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In this paper, we report MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric stack comprised of gallium oxide and gadolinium gallium oxide. Mobilities exceeding 12,000 and 6,000 cm2/Vs, for sheet carrier concentration ns of about 2.5x1012 cm-2 were measured on MOSFET structures on InP and GaAs substrates, respectively. These structures were designed...
Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by DC magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9%, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted,...
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