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In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to...
For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage...
A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state ldquo1rdquo can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility,...
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