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The conventional guard band design approach increases the SRAM Wordline (WL) pulse duration to operate successfully in all the process, voltage and temperature (PVT) corners. This can significantly increase the dynamic energy. This work presents a digital circuit that is able to track and control the WL pulse duration of the SRAM memory across PVT variations, to minimize the dynamic energy while maintaining...
A wide variety of memory topics addressing design trends at advanced technology nodes. Variation tolerant and low power approaches are discussed as well as their application to SRAM, DRAM, Non-volatile memories and DDR5 interfaces.
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