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The trench insulated gate bipolar transistor (TIGBT) suffers from breakdown voltage degradation due to the electric field crowding at the corner of the trench gate in the forward blocking state. We propose a new TIGBT structure that has a deep p+ layer beneath the trench emitter to distribute the concentrated electric field. The deep p+ layer of the structure is formed by ion implantation at the bottom...
A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only...
In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional...
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