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The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiOx) as a phase stabilizer is reported. The β‐Ga2O3 layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane...