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Resistive RAM (ReRAM) has fast access time, ultra-low stand-by power and high reliability, making it a viable memory technology to replace DRAM in main memory. The 1-transistor-1-resistor (1T1R) ReRAM array has density comparable to that of a DRAM array and the advantages of lower programming energy and higher reliability compared to the ReRAM cross-point array. However, 1T1R ReRAM array has significantly...
Resistive RAM (ReRAM) has fast access time, ultra-low stand-by power and high reliability, making it a viable memory technology to replace DRAM for main memory. The 1-transistor-1-resistor (1T1R) ReRAM array has density comparable to that of a DRAM array and the advantages of lower programming energy and higher reliability compared to the ultrahigh density ReRAM cross-point array. In this paper, we...
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