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Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt...
An emerging application for the oxide based resistive random access memory (RRAM) technology is to serve as the synaptic device for the hardware implementation of neuromorphic computing. The gradual resistance modulation capability in RRAM is proposed for emulating analog synapses, and the stochastic switching behavior in RRAM is proposed for emulating binary synapses. In order to evaluate the effectiveness...
3D RRAM array suffers more serious reliability issues than 2D array due to the additional dimension involved. This paper systematically assesses the cell-location-dependent write-access (selected cells) and disturbance issues (unselected cells) for a 3D vertical RRAM array. Using a combination of experiments and simulations, a methodology is developed to enable array-level evaluation by conducting...
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