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AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of two K-band hybrid amplifier demonstrators at 20GHz and 26.5GHz using 0.25µm gate length devices. At these...
We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output...
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
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