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This paper presents a Ku-Band low-noise amplifier using 0.35-µm SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12–18 GHz. An output P1dB of 8.6 dBm is obtained at 15 GHz...
This paper presents a compact 14–18 GHz 6-bit digital phase shifter based on 0.35-µm SiGe BiCOMS technology. Three different topologies are adopted to achieve the desired phase shift with low insertion loss, accurate phase shifting and small parasitic amplitude modulation. The simulated performance of all 64 states of the phase shifter demonstrates an insertion loss of 9±0.9 dB and a RMS phase error...
A 60GHz Wilkinson power divider using the meander lines with the floating defect grounding structure (DGS) is introduced and implemented by using the 0.18μm SiGe BiCMOS technology. The slow-wave characteristics of the meander-line and the floating defected ground structure are investigated and used for miniaturized power divider implementation. The dividers using poly resistor and metal resistor are...
A Variable Gain and Attenuation control Amplifier (VGA) operating with low power, wide bandwidth and large Gain range for interfacing 60GHz RF front-end to Digital Baseband processor has been designed in 180nm SiGe BiCMOS technology from Jazz Semiconductor. The VGA is implemented using two stage amplifier followed by a Buffer stage with additional Diode linearizer for improving the input referred...
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