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This paper briefly presents a 60-GHz dual-chip wireless communication solution adhering to the IEEE 802.11ad standards. The proposed fully-integrated transceiver front-end chip (RFIC) using a sub-harmonic sliding-IF scheme to reduce the design difficulty on VCO, was implemented based on a low cost SiGe 0.18um BiCMOS process and has a compact chip area of 5mm by 3.9mm with a low power consumption of...
This paper given a brief and concise discussion on latest research of RFIC power amplifier (PA) designs, showing the frontier state-of-the-art developments, and then present our PA designs and some typical newest designs in expertise area with three technologies, a.k.a CMOS, SiGe, and III-V semiconductor. At last, three research hotspots and research trends about on chip PA are summarized and discussed.
This paper presents our developed dual-chip wireless communication solution adhering to the IEEE 802.11ad standards. The solution is based on a fully integrated baseband IC (BBIC) embedded with USB3.0 interfaces and a low power 60 GHz transceiver SOC (RFIC) embedded inside an antenna in packaging system. The BBIC uses frequency domain equalizer and preambles to perform synchronization, automatic gain...
A new sub-harmonic QPSK architecture is proposed for microwave and millimeter-wave applications including transceiver. The developed 60GHz differential quadrature sub-harmonic QPSK modulator based on the proposed new QPSK architecture can not only reject both the image frequency and LO leakages but also reduce the LO operation frequency to the half of the conventional modulator. Moreover, the proposed...
This paper presents our developed two-chip wireless communication system adhering to the IEEE 802.11ad standards with a baseband IC (BBIC) integrated with a low power 60 GHz transceiver SOC (RFIC) and antennas. The novel low power 60GHz RFIC using a sub-harmonic sliding-IF scheme is fully integrated based on low cost SiGe 0.18 um BiCMOS process. The BBIC uses an adaptive time domain equalizer rather...
A differential low-cost T/R switch based on a 0.18µm SiGe BiCMOS process with only CMOS components is developed. The proposed switch achieves an ultra-wide bandwidth of 30GHz. For single-end SPDT applications, the switch has 1.5dB to 3.3dB insertion loss and 20dB to 80dB isolation. Input/output matching has been realized from DC to 40GHz. The switch requires no biasing voltage except the 1.8V voltage...
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