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1.8V I/O transistors were fabricated in a 14-nm bulk finFET technology, using 2–3nm Atomic Layer Deposition (ALD) SiO2 in a high-k/metal gate stack. PBTI characterization showed negligible degradation at the operating Vdd, with nFET VOVmax exceeding 2.2V. The pFET counterparts however, showed poor reliability, ascribed to a high defect density in the ALD SiO2 as compared to standard chemical or thermal...
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