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Abstract. We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (1000C) to induce the separation of the Si and the SiO2 phases with the formation of Si nanocrystals embedded...
CO 2 -reforming reactions have been studied in a plug-flow reactor with catalysts containing less than a monolayer of Rh, Ru, or Ir deposited from tetrametallic dodecacarbonyl clusters onto low surface area polycrystalline α-Al 2 O 3 , MgO, CeO 2 , La 2 O 3 , and TiO 2 . The catalytic reactions are studied in conditions at which the carbon formation...
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