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Emerging nonvolatile memory with an oxide–semiconductor-based thin-film transistor (TFT) using indium-gallium-zinc-oxide (IGZO) was developed. The memory is called nonvolatile oxide–semiconductor random access memory (NOSRAM). The memory cell of the NOSRAM (NOSRAM cell) consists of an IGZO TFT for data writing, a normal Si-based p-channel metal-oxide-semiconductor (PMOS) for data reading, and a cell...
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