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Silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors <sc>(mosfet</sc>s) have been applied in high-power and high-frequency converters recently. To effectively predict characteristics of SiC power <sc>mosfet</sc>s in the design phase, a simple and valid model is needed. In this paper, a simple improved SiC power <sc>mosfet</sc> behavioral...
Silicon carbide (SiC) devices have its unique advantages of high operating temperature, high voltage capability with low switching losses when compared to its silicon counterparts. This paper presents a systematic method for long-term reliability analysis for SiC devices. The reliability block diagrams (RBDs) have been established for a SiC power module with standard wire-bonded package. The reliability...
Compared with the silicon semiconductors, silicon carbide (SiC) metal-oxide-semiconductor Field-Efïect transistor (MOSFET) can operate at higher switching frequency and higher temperature, which makes the junction temperature estimation more significant and challenging. In this paper, different thermo- sensitive electrical parameters (TSEPs) are investigated about their potential to measure the junction...
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