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Silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors <sc>(mosfet</sc>s) have been applied in high-power and high-frequency converters recently. To effectively predict characteristics of SiC power <sc>mosfet</sc>s in the design phase, a simple and valid model is needed. In this paper, a simple improved SiC power <sc>mosfet</sc> behavioral...
The main function of the DC-link decoupling capacitors, integrated between the voltage source and the power devices, is to suppress the effect of the parasitic inductors and minimize the voltage overshoot. Besides, decoupling capacitors can also affect the electromagnetic interference frequency spectra. In this paper, the elïects of decoupling capacitors are explained from the time-domain and the...
To keep stray inductance low is a basic requirement in package design of IGBT modules. Meanwhile, paralleling of several switches is unavoidable in modern power electronics to insure always increasing current levels. Current balance between paralleled chips is another concern. In this paper, a simple power module, several different types of IGBT chips are respectively associated to reach the classical...
From the basis of math-physics, the reverse recovery characteristics of the power PIN diode are studied in detail. The simulation model of PIN diode which can describe correctly the reverse recovery current is obtained. This model overcomes the defects of the standard SPICE model which completely ignores the turn-off characteristics. The simulation comparison between the new model with the standard...
IGBT is one of the key components of motor driving system for electric vehicles, and its reliability directly affects the reliability of the electric vehicles. The reliability of the IGBT is affected by the loss and the junction temperature in working condition. To predict the IGBTpsilas loss and thermal response, especially in the case of adverse dynamic conditions, the dynamic loss model and the...
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