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The packaging technology for the medium‐voltage silicon carbide (SiC)‐metal oxide semiconductor field‐effect transistor (MOSFETs) has come a long way since its inception. Now, it is feasible to design half‐bridge power modules based on 10‐kV SiC‐MOSFETs for higher current applications. This paves the way for many application areas for these devices, particularly for medium‐voltage and high‐power applications...
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