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In this study, we focus on the effect of the input capacitance of 1200 V Trench (T) IGBT on the switching waveforms under clamped inductive load. For a given gate resistance, due to the trench gate oxide structure, the trench device presents a higher input impedance than the planar (P) IGBT, which is responsible for a high switching time during turn-on. In the case of the trench device, whereas the...
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