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The effect of mechanical stress on the power dice is investigated by considering the application of mechanical stress on a Punch Through Planar Insulated Gate Bipolar Transistor under static electrical characterizations. Specific test vehicles and test bench for applying a tensile or compressive mechanical stress are described in detail. Furthermore, 2D finite element simulations are carried out to...
In this paper, a new Punch Through Trench IGBT using a Si(1-x)Gex N+ buffer layer is investigated by using two dimensional finite elements numerical simulations. The performances of this device are mainly obtained from the reduction of the turn-off switching time for a slight elevation of the on-state voltage. A study of the main static characteristics has been performed, particularly the relevance...
Our objective is to establish a connection between finite elements mechanical simulations using ANSYS software applied on a power module including a silicone die with finite elements electrical simulations using TCAD SENTAURUS software applied on a silicone power transistor, such as a Planar Gate Punch Through Insulated Gate Bipolar Transistor (IGBT). In this paper, the thermo-mechanical finite elements...
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