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Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin–orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in the critical charge current for spin torque-driven magnetization reversal...
As scaling CMOS devices is approaching its fundamental limits, a new direction of research has emerged to study beyond-CMOS spintronic devices that use electronic spin as their state variable, offering new and enhanced functionalities. Due to low operating voltage, non-volatility, and efficient implementation of majority gate, a novel spin-based device, all-spin logic (ASL), has been widely studied...
A new digital device scheme based on the magnetoelectric coupling and automotion of the magnetic domain wall is proposed. A single device is composed of a ferromagnetic wire and two ferroelectric capacitors served as the input and the output. It is shown that with the initialization in the magnetic states, a single device and the corresponding majority gate can realize the NOT, NAND, and NOR functions...
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