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Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 Ω, and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si...
We have successfully obtained a highly c-axis oriented epitaxial Pb(Zr, Ti)O3 (PZT) based thin film, 0.06Pb(Mn1/3, Nb2/3)O3-0.94Pb(Zr0.5, Ti0.5)O3 (PMnN-PZT), on a (100) Si substrate by fast cooling of the substrate just after sputter deposition. The Si substrates were covered with SrRuO3//La0.5Sr0.5CoO3//CeO2//yttria-stabilized zirconia buffer layers. It is found that c-axis orientation ratio of...
PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300–1300...
In this study, we have proposed a novel laterally driven piezoelectric MEMS (MicroElectro Mechanical Systems) switch using a high-aspect-ratio (AR) PZT (Pb[ZrxTi1−x]O3) structure. Then, the fabrication process of the PZT structure based on PZT filling process in a deep Si trench is developed to realize a laterally driven PZT microactuator. At first, the process of the Si trench with a thin Al2O3 layer...
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