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We investigated the use of ternary and quaternary chalcogenide compounds based on Cu, Zn, Sn and Si for use as high band gap absorber layers in thin film photovoltaics. We have investigated the fabrication of Cu2Zn(Sn,Si)Se4, Cu2Si(S,Se)3 and Cu8Si(S,Se)6 thin film layers. Whereas, Cu2Zn(Sn,Si)Se4 and Cu2Si(S,Se)3 appeared to be difficult to fabricate, because the Si did not intermix well with the...
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