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We determined the electrical junction (EJ) locations in Cu(In,Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20‐nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin‐film devices. Cross‐sectional sample preparation for the SCS measurement was developed by high‐energy ion milling at room temperature for polishing the cross section to make it flat, followed...
We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ∼20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ∼40 nm inside the...
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