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The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the...
As the development of Z-source / quasi-Z-source inverter (ZSI/qZSI), it appears several modified Space Vector Modulations (SVMs) for controlling them. Here, three typical SVMs are investigated and another extended one is also presented. The inductor current ripple, capacitor voltage gain, efficiency, and other performances of these control schemes are analyzed respectively. Simulation and experimental...
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