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This work presents a 4 × 4 capacitive ultrasonic sensor array fabricated in a 0.18-μm CMOS process. Compared to prior CMOS MEMS ultrasonic sensors, the smaller electrode separation in the new platform significantly improves the capacitive sensitivity. The sensor has a measured center frequency at 3.8MHz with a fractional bandwidth of 74%. The measured sensitivity is 499 mVpp/MPa/V. With the advance...
This work proposes to develop a CMOS (complementary metal oxide semiconductor) capacitive ultrasonic sensor chip that can be jointly operated with an acoustic lens system to achieve fast 3-D photoacoustic imaging. Compared to conventional piezoelectric technology, capacitive transducers have a wider bandwidth and can be miniaturized and fabricated in a dense array to provide better imaging quality...
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