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High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm2) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial...
Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BVCEO=1100 V. A reduction of the current gain was observed after contact annealing at 950 degC and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter...
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