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High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm2) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial...
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