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The ESD failure mechanism of integrated circuits in a 0.11µm CMOS process was investigated experimentally in detail. The leakage current was presented through I–V measurements, some hotspots were observed on the failed chips when ESD occurring. The study suggested two failure modes in the experiments. One was defined as thermal ESD failure, and the large current between one pad and another pad can...
This paper presents a modified Doherty power amplifier (DPA) architecture to release bandwidth limitation of the conventional DPA. The proposed DPA structure eliminates two quarter wavelength impedance inverters used in the conventional DPAs (one is after the output matching network of the carrier amplifier and the other one is before the load of the DPA). Instead, both the carrier and peak amplifiers...
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