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We report on muon-induced single event upsets (SEU) in SRAMs built on 32nm planar and 22nm and 14nm 3D Tri-Gate technologies. Experimental cross sections were measured using the M20C positive muon beamline at TRIUMF. Physics-based simulations were conducted to estimate sea-level SEU rates for both, positive and negative muons. Our results indicate that a) the muon induced upset rate is negligible...
Single Event Transients (SET) in digital logic pose an ever increasing reliability challenge as device dimensions shrink in modern technologies. Projection of SET sensitivity with scaling is essential to assess the logic failure and error probability in modern technology generations. This paper discusses the effects of device scaling from 45nm to 12nm processes and circuit parameter tuning on SETs...
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