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Millimeter- and submillimeter-wave integrated circuits (MMICs and S-MMICs) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented. These circuits use the advanced metamorphic high electron mobility transistor (mHEMT) technology based on the InAlAs/InGaAs material system on 4″ GaAs substrates. The presented circuits are key components...
A metamorphic high electron mobility transistor (mHEMT) technology with 20 nm gate length for manufacturing of terahertz monolithic integrated circuits (TMICs) is presented. The passive elements include up to four interconnection metallization layers separated by low-k dielectrics (BCB), SiN and air which can be used to realize front side signal lines. Shielding the substrate from the electromagnetic...
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors...
In this paper we present a very compact 0.28 × 0.55 mm2 six-stage terahertz monolithic integrated circuit (TMIC) using 35 nm gate length metamorphic high electron mobility transistors (mHEMTs). A linear gain of 20.3 dB at 610 GHz and more than 18 dB over the bandwidth from 557 to 616 GHz was achieved for a drain voltage Vd of only 0.6 V. The noise performance of the 35 nm mHEMT was investigated on...
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