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The design and characterization of a cryogenic SiGe HBT low-noise amplifier optimized for high dynamic range is presented. The design leverages cryogenic SiGe HBT models capable of simultaneously describing weak nonlinearity, noise, and small-signal performance. The integrated circuit was realized in the Global Foundries 0.12 μm BiCMOS 8HP technology platform and operates from 1–20 GHz. When biased...
The broadband noise performance of silicon germanium (SiGe) and compound semiconductor (CS) heterojunction bipolar transistors (HBTs) is presented. The key noise mechanisms in HBTs are summarized to provide a framework through which the noise limitations of the devices can be understood. Process related details and transport physics of each class of device are then compared and contrasted with a focus...
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