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To meet the electrical performance requirements, copper traces with ultralow- (ULK) interlayer dielectric (ILD) materials are used in today's semiconductor devices. The dielectric constant of these materials is often reduced through the introduction of pores or inclusions, and thus, the ULK ILD materials have low fracture strength. During flip-chip assembly, thermally induced stresses occurring...
Copper/low-k dielectrics are used in today's ICs to enhance electrical performance. The low-k interlayer dielectric (ILD) materials have low fracture strength due to the presence of pores or other inclusions to reduce the dielectric constant. During flip-chip assembly, when the die/substrate structure is cooled down from reflow temperature to room temperature, thermo-mechanical strains and stresses...
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