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The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches...
This paper presents a state-of-the-art 28nm CMOS technology using conventional poly gate and SiON gate dielectric (Poly/SiON) with best-in-the-class transistor performance, SRAM SNM (static noise margin), MOM capacitance density and mismatch, and ULK (k=2.5) interconnect. The ION are 683 and 503 uA/um (at IOFF = 1nA/um, VDD=1V) for the n- and p-MOSFET, respectively. (With normalized tOX and VDD, these...
High temperature RTO (Rapid Thermal Oxidation) process can get good quality but growth rate was too fast to get a controllable ultra-thin SiO2 as interfacial layer (IL) for high-K gate dielectrics application. In this paper, we investigated the physical and electrical properties of IL film obtained by different oxidation gas ratio, temperature, pressure. We found high temperature (>1080C) and hydrogen...
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