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In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50–75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled...
To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers...
We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 times 1.00 mm2 and 2.25 times 1.00 mm2. The gate width of the transistor is 4times15 mum. The scattering parameters and the noise figures of the amplifiers were...
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