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Recently, high power CW operation and nanosecond fiber lasers have been used for many industrial applications. The nanosecond Yb-doped fiber(YDF) laser system using PCF (photonic crystal fiber) rod have been developed to produce 300 W[1]. High-peak and high-average-power nanosecond-pulse lasers are susceptible to the nonlinear effects. The spectral combination of four pulsed fiber amplifiers has been...
Ion-implantation GaAs MESFETs were improved for Ku-band applications. Over 20% of the power added efficiency (PAE) was achieved at -25 dBc of third order of intermodulation distortion ratio (IM3) at 14.5 GHz. In order to achieve high PAE and low IM3, the carrier profile was designed by using ion-implantations and the transconductance (gm) along the load-line was measured. This PAE was 5% higher than...
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