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Monolithic light source is the only missing component to realize all silicon based photonics for high density and low power optical interconnections. In this paper, we will review our attempts to develop light-emitting devices based on silicon quantum wells made by state-of-the-art silicon process.
Absorption spectra of high purity metallic and semiconducting single-walled carbon nanotubes have been measured from THz to UV region. The broad absorption band around 100-1000 cm-1 of the metallic sample can correspond to the optical transition between small energy gap in “metallic” nanotubes.
We have developed all-silicon based light-emitter for optical interconnections. The relatively short florescent lifetime of 4.2 ns in a silicon quantum well makes direct modulations at 10 Mbps accessible for low-end high-volume consumer applications.
Absorption spectra of high purity metallic and semiconducting single-walled carbon nanotubes separated by density-gradient ultracentrifugation method have been measured using THz time-domain spectroscopy. Absorbance in metallic nanotubes increase with increasing frequency up to 6 THz. This result suggests that the dielectronic properties even for high purity metallic nanotube samples can not be explained...
We have observed net optical gain by current injections to ultra-thin Si embedded in a resonant optical cavity. The cavity consists of a dielectric waveguide fabricated by CMOS and MEMS process. The photoluminescence (PL) spectra show narrow resonances peaked at the designed wavelength, and the electroluminescence (EL) intensity increases super-linearly with currents. The comparisons with first principle...
We confirmed enhanced electroluminescence by lateral carrier injections to quantum confined ultra-thin silicon. The optical intensity can be controlled by the back gate voltage, and the device operates as a light-emitting transistor.
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