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This paper describes a locally one-dimensional finite-difference time domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional...
This paper describes an alternating-direction implicit finite-difference time-domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to the significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional...
This paper describes a meshless method for the two-dimensional time-dependent simulation of semiconductor devices. In this method the solution is approximated using global radial basis functions (RBF) and distributed quasi-random points can be used. This allows the computation of problems with complex-shaped boundaries and forming fine and coarse points abundance in locations where variable solutions...
We have studied the effect of wave propagation along the electrodes of a GaAs MESFET using fully distributed model. A three coupled lines theory, including active and passive electromagnetic coupling between semiconductor electrodes is used to analysis. Each distributed device element is considered as a combination of three coupled lines and a conventional equivalent circuit of a GaAs MESFET. The...
In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional...
In this paper, an efficient numerical method for transient analysis of lossy nonuniform transmission lines is presented. This method considers the frequency-dependent conductor losses into the time-domain solution of the nonuniform multiconductor transmission lines. The results of this method are compared with the conventional time-domain to frequency-domain (TDFD) solution technique and a good agreement...
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