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A thorough approach to the location and origin of traps generated in InGaP/GaAs heterojunction bipolar transistors (HBT) by low frequency noise characterization and reliable physics-based simulation is discussed. Physics-based simulation together with the low frequency equivalent short-circuit current noise sources (Sib, Sic) experimental results reveal an electron trap located at the 5-InGaP/GaAs...
This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation...
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