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In this paper, the type, activation energy ($\textit{E}_{a}$ ) and cross section (${\sigma }_{n}$ ) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements. Furthermore, we present the 2-D physics based TCAD numerical simulation analysis of this device. The dc simulation results are calibrated to match...
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