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Breaking through diffraction limit at terahertz frequencies is currently performed with the near-field scanning optical microscopy, which suffers from low integration and sensitivity limitations. In this paper, a solid-state superresolution imaging device in 130-nm SiGe BiCMOS technology operating around 534–562 GHz is presented. The device exhibits a single-chip integration of the complete imaging...
Silicon technologies have already been employed in state-of-the-art THz imagers. However, their optical resolution was restricted to millimeters by the diffraction limit [1,2], and THz super-resolution imagers were implemented in aperture or apertureless scanning near-field optical microscopy [3]. Such systems are limited to a single pixel with an illumination source and detector components placed...
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