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Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. An $8\times 8$ matrix...
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