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Accurate de-embedding technique to remove the effect of pads is highly desired in on-wafer RF characterization, especially in the millimeter wave band. There are several calibration techniques such as TRL, Through-Only, Multi-Line, the method using Thru and Line patterns, etc. But the most commonly used technique is the de-embedding technique using open and short patterns, referred to as the open-short...
We have proposed de-embedding method with the aid of EM analysis. A hybrid S/Z-parameters are used for a four-port parasitic circuit. The higher accuracy of the proposed method, within 4%, is validated via EM simulation than that of conventional method using open/short-TEG, more than 10%. Verification of the proposed method by experiment is the future task.
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