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This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (Ids) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the...
In this paper, a large signal model for AlGaN/GaN HEMTs is proposed which accounts for the thermal and trapping effects. Polynomials and overdetermined system is introduced to better address the complex thermal effect. The extraction is simple and fast compared with empirical models, since only solving overdetermined linear equations is required for the extraction of Ids. The extracted trapping and...
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