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Field emitter has high speed response characteristics at over 100 GHz because they utilize the electron emission in a vacuum. Therefore, field emission device are very suitable for use as high speed switching elements, and practical field emitters can be fabricated by using Si process. Consequently we have fabricated a local vacuum package on a Si substrate that is adapted to IC process for on-chip...
A novel field emission type infrared light sensor was proposed and demonstrated. The electron emission phenomena from pyroelectric material by infrared light irradiation were confirmed. The electron emission current increased rapidly and decayed slowly when a step infrared light was irradiated, and the peak emission currents were proportional to the incident infrared light power. The emission efficiency...
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