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In this paper, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using carbon nanotubes (CNTs) as source/drain/gate electrodes have been proposed and experimentally realized. Effect of the annealing temperature on the contact properties between a-IGZO and single-walled carbon nanotube (SWNT) electrodes, as well as the electrical properties of the a-IGZO TFTs have been investigated...
All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105,...
A concept of tuning the on-current for p-type carbon nanotube thin film transistors (CNT TFTs) by SiO2 passivation layer has been proposed, which meets the different current density requirement for macroelectronic applications. The adsorbed oxygen molecules shift the fermi level down towards valence band, which decreases the barrier height between CNTs and electrodes for holes, so that an as-made...
The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface...
Fully transparent solution-processed carbon nanotube thin film transistors (CNT-TFTs) on flexible substrate are proposed and fabricated by a facile and low-cost process. By using 95%-semiconducting enriched carbon nanotubes as channel and transparent indium tin oxide as gate, source and drain electrodes, CNT-TFTs with a high on/off current ratio of 2.68×106, a low threshold voltage of 0.38 V, a steep...
Determination of the annealing condition has always been critical and challenging for performance improvement of the carbon-based devices. In this paper, rapid thermal annealing (RTA) in hydrogen followed by rapid cooling down with a double-thermal-region movable furnace for carbon nanotube thin film transistors (CNT-TFTs) has been proved to be an effective method to improve device performance. After...
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