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It was demonstrated that the body bias appearing the super steep Subthreshold Slope (SS) reduces from over 5V to below 1V on the PN-body tied SOIFET's which show the super steep SS with the ultralow drain voltage of 0.1V, when the impurity concentration of the N region on the body tied area is redesigned from the high concentration of the N+ to the low N−. The 3D device simulations also confirmed...
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