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There is increasing demand of advanced TEM techniques for modern IC failure analysis. Some practical issues of using TEM holography in studying MOSFETs P-N junction, channel strain and magnetic domains are discussed in this paper. It is shown that salicide/contact have significant effect on the phase diagram of shallow S/D P-N junction and hinders its application in shallow junction devices. In holography...
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which...
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
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