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A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RF in millimeter-wave CMOS circuits. Since metal-insulator-metal (MIM) capacitors are used to achieve very low impedance the TL named as MIM TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match...
For millimeter-wave CMOS circuit design, accurate device models are necessary. Especially an accurate de-embedding method is very important. Hence, precise deembedding of pad parasitics is the first and valuable step to achieve accurate device models. In this work, a new pad modeling based on an L-2L de-embedding is proposed. The pad model is derived with an assumption that characteristic impedance...
This paper presents small-area 60 GHz amplifiers using narrow transmission line. All the circuits presented by the authors were designed using narrow transmission line with a 6 µm signal line width. Because the phase constant of a narrow transmission line is larger, impedance matching is achieved using a much shorter line length compared with matching using a wider transmission line. Single-stage...
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