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The research of 60GHz CMOS transceivers has bloomed due to their capability of achieving low-cost multi-Gb/s short-range wireless communications [1]. Considering practical use of the 60GHz CMOS transceivers, longer operation lifetime with high output power is preferred to provide reliable products. Unfortunately, as indicated in [2], the output power capability of the transmitter will gradually degrade...
This paper proposes the method of realization of high common-mode rejection ratio(CMRR) at 60 GHz. High CMRR can compensate the differential mismatch. In the proposed method, virtual ground for differential-mode and LC peaking for common-mode are utilized. To confirm the effect of this technique, the 2-stage differential power amplifier is fabricated in a 65nm CMOS process. It achieves a CMRR of 26...
This paper presents small-area 60 GHz amplifiers using narrow transmission line. All the circuits presented by the authors were designed using narrow transmission line with a 6 µm signal line width. Because the phase constant of a narrow transmission line is larger, impedance matching is achieved using a much shorter line length compared with matching using a wider transmission line. Single-stage...
This paper proposes the method of varactor cross-coupling with adaptive bias. The capacitive cross-coupling neutralization contributes to improve power gain and reverse isolation. The optimized capacitance of cross-coupled PA depends heavily on the input power. Thus, the varacter is used and adaptive bias is obtained by the feedback of the input power. The 2-stage differential power amplifier is fabricated...
The paper presented a 2.4GHz fully integrated CMOS power amplifier using capacitive cross-coupling, fabricated in 0.18μm CMOS. With a 3.3-V supply voltage, PAEmax and PAE at 1 dB compression point are 34.3% and 26.8%. P1dB, Psat, and PG are 25.2dBm, 27.7dBm and 26.5dB, respectively. The advantages of the proposed capacitive-cross-coupled PA are the improvement of reverse isolation and the area saving.
This paper shows measurement results of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, wire coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is most dominant in CMOS chips and the total isolation becomes less than -50 dB with more than 0.4...
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