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The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
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